Title :
0.1 μm gate length MODFETs with unity current gain cutoff frequency above 110 GHz
Author :
Levy, H.M. ; Tasker, P.J. ; Lee, Hongseok ; Wolf, E.D. ; Eastman, L.F. ; Kohn, Erhard
fDate :
3/17/1988 12:00:00 AM
Abstract :
AlGa/GaAs modulation-doped field-effect transistors (MODFETs) have been fabricated with `T´ cross-section 0.1 μm gates using electron-beam lithography. A unity current gain cutoff frequency f T of 113 GHz has been measured for a spike-doped MODFET with a GaAs buffer. This is the highest measured fT reported to date for FETs of any kind
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; solid-state microwave devices; 0.1 micron; 113 GHz; AlGaAs-GaAs; EHF; GaAs buffer; HEMT; III-V semiconductors; MM-wave device; MODFETs; electron-beam lithography; millimetre wave operation; modulation-doped field-effect transistors; solid state microwave devices; submicron T-cross-section gate; unity current gain cutoff frequency;
Journal_Title :
Electronics Letters
