High frequency CV characteristics of plasma oxidised silicon carbide

Oxides have successfully been grown on 4H-silicon carbide substrates by low temperature (<300°C) plasma oxidation. HFCV measurements on MOS capacitors show the devices to be stable, and capable of accumulation, depletion and inversion. The devices have a D _it of 2×10¹¹ eV^-1 cm^-2, a Q₁ of 1.05×10¹² cm^-2 and show negligible slow trapping effects