Total Dose Effects in CMOS Trench Isolation Regions

Author

Johnston, A.H. ; Swimm, R.T. ; Allen, G.R. ; Miyahira, T.F.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

56

Issue

4

fYear

2009

Firstpage

1941

Lastpage

1949

Abstract

A model for inversion in trench isolation is developed using an analytical model to calculate the surface charge density along the trench sidewall. The model shows that the inversion path takes place well below the trench corner for devices with 180 nm feature size. The increased hardness of highly scaled devices is caused by a combination of higher doping levels and a decrease in the lateral charge collection path within the trench.

Keywords

CMOS integrated circuits; hardness; isolation technology; radiation effects; semiconductor device models; semiconductor doping; surface charging; CMOS trench isolation regions; analytical model; doping levels; hardness; inversion path; lateral charge collection path; radiation effects; size 180 nm; surface charge density; total dose effects; Analytical models; CMOS technology; Doping; Ionizing radiation; Propulsion; Radiation effects; Semiconductor device modeling; Semiconductor process modeling; Space technology; Testing; CMOS; ionizing dose; scaling; shallow trench isolation; space radiation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2019273

Filename

5204630