Title :
Total Dose Effects in CMOS Trench Isolation Regions
Author :
Johnston, A.H. ; Swimm, R.T. ; Allen, G.R. ; Miyahira, T.F.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
A model for inversion in trench isolation is developed using an analytical model to calculate the surface charge density along the trench sidewall. The model shows that the inversion path takes place well below the trench corner for devices with 180 nm feature size. The increased hardness of highly scaled devices is caused by a combination of higher doping levels and a decrease in the lateral charge collection path within the trench.
Keywords :
CMOS integrated circuits; hardness; isolation technology; radiation effects; semiconductor device models; semiconductor doping; surface charging; CMOS trench isolation regions; analytical model; doping levels; hardness; inversion path; lateral charge collection path; radiation effects; size 180 nm; surface charge density; total dose effects; Analytical models; CMOS technology; Doping; Ionizing radiation; Propulsion; Radiation effects; Semiconductor device modeling; Semiconductor process modeling; Space technology; Testing; CMOS; ionizing dose; scaling; shallow trench isolation; space radiation;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2019273
