Title :
High-performance InGaP/InGaAs/GaAs step-compositioned doped-channel field-effect transistor (SCDCFET)
Author :
Lih-Wen Laih ; Shiou-Ying Cheng ; Wei-Chou Wang ; Po-Hung Lin ; Jing-Yuh Chen ; Wei Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
fDate :
1/2/1997 12:00:00 AM
Abstract :
A new i-In0.49Ga0.51P-InxGa1-x As/i-GaAs step-compositioned doped-channel field-effect transistor (SCDCFET) has been fabricated and studied. Owing to the presence of a V-shaped energy band formed by the step-compositioned doped-channel structure, a large current density, a large gate voltage swing with high average transconductance and a high breakdown voltage are obtained. For a 1×80 μm2 gate dimension, a maximum drain saturation current of 830 mA/mm, a maximum transconductance of 188 mS/mm, a high gate breakdown voltage of 34 V, and a large gate voltage swing of 3.3 V with transconductance >150 mS/mm are achieved. These performances show that the studied device has a good potentiality for high-speed, high-power, and large input signal circuit applications
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; gallium compounds; indium compounds; In0.49Ga0.51P-InGaAs-GaAs; SCDCFET; V-shaped energy band; breakdown voltage; current density; drain saturation current; gate voltage swing; high-power device; high-speed device; large input signal circuit; step-compositioned doped-channel field-effect transistor; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970030
