High-performance InGaP/InGaAs/GaAs step-compositioned doped-channel field-effect transistor (SCDCFET)

Author

Lih-Wen Laih ; Shiou-Ying Cheng ; Wei-Chou Wang ; Po-Hung Lin ; Jing-Yuh Chen ; Wei Lin

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan

Volume

33

Issue

1

fYear

1997

fDate

1/2/1997 12:00:00 AM

Firstpage

98

Lastpage

99

Abstract

A new i-In_0.49Ga_0.51P-In_xGa_1-xAs/i-GaAs step-compositioned doped-channel field-effect transistor (SCDCFET) has been fabricated and studied. Owing to the presence of a V-shaped energy band formed by the step-compositioned doped-channel structure, a large current density, a large gate voltage swing with high average transconductance and a high breakdown voltage are obtained. For a 1×80 μm² gate dimension, a maximum drain saturation current of 830 mA/mm, a maximum transconductance of 188 mS/mm, a high gate breakdown voltage of 34 V, and a large gate voltage swing of 3.3 V with transconductance >150 mS/mm are achieved. These performances show that the studied device has a good potentiality for high-speed, high-power, and large input signal circuit applications

Keywords

III-V semiconductors; field effect transistors; gallium arsenide; gallium compounds; indium compounds; In_0.49Ga_0.51P-InGaAs-GaAs; SCDCFET; V-shaped energy band; breakdown voltage; current density; drain saturation current; gate voltage swing; high-power device; high-speed device; large input signal circuit; step-compositioned doped-channel field-effect transistor; transconductance;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19970030

Filename

555112