The influence of Ge grading on the bias and temperature characteristics of SiGe HBTs for precision analog circuits

Author

Salmon, Stacey L. ; Cressler, John D. ; Jaeger, Richard C. ; Harame, David L.

Author_Institution

Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA

Volume

47

Issue

2

fYear

2000

fDate

2/1/2000 12:00:00 AM

Firstpage

292

Lastpage

298

Abstract

This paper analyzes the effects of Ge profile shape on the bias and temperature characteristics of advanced UHV/CVD SiGe heterojunction bipolar transistors (HBTs). The widely used bandgap reference (BGR) design equation and a more general analytical expression incorporating Ge grading developed in this work are used to compare silicon devices to their SiGe counterparts. Theory, device measurements, and SPICE simulations are used to investigate the impact of Ge grading on SiGe HBT precision voltage references. It is concluded that conventional SPICE can be used to account for Ge grading effects in SiGe HBT modeling. Sufficient Ge grading can have a significant impact on the accuracy of precision voltage references, particularly at reduced temperatures, and thus warrants attention

Keywords

Ge-Si alloys; SPICE; characteristics measurement; heterojunction bipolar transistors; semiconductor device measurement; semiconductor device models; semiconductor materials; HBTs; SPICE simulations; SiGe; bandgap reference design equation; bias characteristics; device measurements; precision analog circuits; precision voltage references; profile shape; reduced temperatures; temperature characteristics; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; SPICE; Shape; Silicon devices; Silicon germanium; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.822270

Filename

822270