DocumentCode
1299435
Title
Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM
Author
Autran, L. ; Roche, P. ; Sauze, S. ; Gasiot, G. ; Munteanu, D. ; Loaiza, P. ; Zampaolo, M. ; Borel, J.
Author_Institution
CNRS, Aix-Marseille Univ., Marseille, France
Volume
56
Issue
4
fYear
2009
Firstpage
2258
Lastpage
2266
Abstract
We report real-time SER characterization of CMOS 65 nm SRAM memories in both altitude and underground environments. Neutron and alpha-particle SERs are compared with data obtained from accelerated tests and values previously measured for CMOS 130 nm technology.
Keywords
CMOS integrated circuits; SRAM chips; CMOS; SRAM memories; accelerated tests; alpha-particle single-event rate; neutron single-event rate; real-time SER characterization; size 130 nm; size 65 nm; CMOS technology; Circuit testing; Contamination; Impurities; Integrated circuit technology; Microelectronics; Nanostructured materials; Neutrons; Pollution measurement; Random access memory; Accelerated tests; SER simulation; alpha contamination; atmospheric neutrons; neutron-induced SER; real-time testing; single-Event Rate (SER); static memory; terrestrial radiation environment;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2009.2012426
Filename
5204636
Link To Document