Title :
Annealing behavior of a proton irradiated AlxGa1-x N/GaN high electron mobility transistor grown by MBE
Author :
Cai, S.J. ; Tang, Y.S. ; Li, Ruodai ; Wei, Y.Y. ; Wong, L. ; Chen, Y.L. ; Wang, K.L. ; Mary Chen ; Schrimpf, R.D. ; Keay, Joel C. ; Galloway, Kenneth F.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
2/1/2000 12:00:00 AM
Abstract :
The influence of proton irradiation (1.8 MeV, 1×1014 cm-2) on the properties of an AlxGa1-x N/GaN high electron mobility transistor (HEMT) is studied from current-voltage (I-V) and Raman scattering measurements as a function of rapid thermal annealing (RTA) temperature after irradiation. The I-V curves show that the saturation current (Ids) and the transconductance (gm) of the HEMT were seriously reduced by the irradiation. However, the dc characteristics of the HEMT could be mostly recovered by RTA at over 800°C
Keywords :
III-V semiconductors; Raman spectra; aluminium compounds; gallium compounds; high electron mobility transistors; molecular beam epitaxial growth; proton effects; rapid thermal annealing; wide band gap semiconductors; 800 C; AlxGa1-xN/GaN high electron mobility transistor; AlGaN-GaN; MBE growth; Raman scattering; current-voltage characteristics; proton irradiation; rapid thermal annealing; saturation current; transconductance; Annealing; Electron mobility; Gallium nitride; HEMTs; MODFETs; Microwave devices; Molecular beam epitaxial growth; Protons; Raman scattering; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
