DocumentCode
1299439
Title
Annealing behavior of a proton irradiated AlxGa1-x N/GaN high electron mobility transistor grown by MBE
Author
Cai, S.J. ; Tang, Y.S. ; Li, Ruodai ; Wei, Y.Y. ; Wong, L. ; Chen, Y.L. ; Wang, K.L. ; Mary Chen ; Schrimpf, R.D. ; Keay, Joel C. ; Galloway, Kenneth F.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume
47
Issue
2
fYear
2000
fDate
2/1/2000 12:00:00 AM
Firstpage
304
Lastpage
307
Abstract
The influence of proton irradiation (1.8 MeV, 1×1014 cm-2) on the properties of an AlxGa1-x N/GaN high electron mobility transistor (HEMT) is studied from current-voltage (I-V) and Raman scattering measurements as a function of rapid thermal annealing (RTA) temperature after irradiation. The I-V curves show that the saturation current (Ids) and the transconductance (gm) of the HEMT were seriously reduced by the irradiation. However, the dc characteristics of the HEMT could be mostly recovered by RTA at over 800°C
Keywords
III-V semiconductors; Raman spectra; aluminium compounds; gallium compounds; high electron mobility transistors; molecular beam epitaxial growth; proton effects; rapid thermal annealing; wide band gap semiconductors; 800 C; AlxGa1-xN/GaN high electron mobility transistor; AlGaN-GaN; MBE growth; Raman scattering; current-voltage characteristics; proton irradiation; rapid thermal annealing; saturation current; transconductance; Annealing; Electron mobility; Gallium nitride; HEMTs; MODFETs; Microwave devices; Molecular beam epitaxial growth; Protons; Raman scattering; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.822272
Filename
822272
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