Electrical modeling of interface roughness in thin film electroluminescent devices

Author

Neyts, Kristiaan ; De Visschere, Patrick M J ; Soenen, Bart ; Stuyven, Gert

Author_Institution

Dept. of Electron. & Inf. Syst., Ghent Univ., Belgium

Volume

47

Issue

2

fYear

2000

fDate

2/1/2000 12:00:00 AM

Firstpage

318

Lastpage

325

Abstract

If two dielectric materials with different permittivities are in contact with each other and the interface between them is rough, then the electric field near this interface will be very inhomogeneous. In thin film electroluminescent devices, light is generated when electrons move back and forth in the phosphor layer under the influence of a strong ac electric field. At high electric fields, the electrons trapped in deep states at the interface between phosphor and insulator layer tunnel into the conduction band of the phosphor. This tunnel process is very sensitive to the electric field at the interface, so for a rough interface the electron flow will be very inhomogeneous. The relation between the interface roughness and the inhomogeneous charge transfer in thin film electroluminescent devices is investigated, based on an analytical flux tube model. The importance of the inhomogeneous current for the use of gray levels and aging is discussed

Keywords

electroluminescent devices; interface roughness; thin film devices; tunnelling; aging; dielectric material; electric field; electrical model; electron tunnelling; flux tube; gray level; inhomogeneous charge transfer; insulator layer; interface roughness; permittivity; phosphor layer; thin film electroluminescent device; Dielectric materials; Dielectric thin films; Electric fields; Electroluminescent devices; Electrons; Nonuniform electric fields; Permittivity; Phosphors; Thin film devices; Transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.822275

Filename

822275