Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-Ray Detector Material

Author

Zappettini, Andrea ; Zha, Mingzheng ; Marchini, Laura ; Calestani, Davide ; Mosca, Roberto ; Gombia, Enos ; Zanotti, Lucio ; Zanichelli, Massimiliano ; Pavesi, Maura ; Auricchio, Natalia ; Caroli, Ezio

Author_Institution

IMEM-CNR, Rice Univ., Parma, Italy

Volume

56

Issue

4

fYear

2009

Firstpage

1743

Lastpage

1746

Abstract

Two-inch-diameter CdZnTe crystals doped with indium were grown by the boron oxide encapsulated vertical Bridgman technique. The crystals showed large single crystalline yield and low etch pit density. The background impurity content was dominated by boron in concentration lower than 1 ppm. High resistivity was obtained and a procedure for contact preparation was developed. The mobility-lifetime product of the material was determined by both X-ray irradiation and photocurrent spectroscopy. The X-ray detector prepared with this material showed good spectroscopic performance.

Keywords

II-VI semiconductors; X-ray detection; X-ray effects; cadmium compounds; crystal growth from melt; electrical resistivity; etching; indium; photoconductivity; semiconductor counters; semiconductor doping; zinc compounds; CdZnTe:In; X-ray detector; X-ray irradiation; boron concentration; boron oxide encapsulated vertical Bridgman technique; indium doping; low etch pit density; mobility-lifetime product; photocurrent spectroscopy; resistivity; size 2 inch; two-inch-diameter semiconductor crystals; Boron; Conductivity; Crystalline materials; Crystallization; Crystals; Etching; Impurities; Indium; Spectroscopy; X-ray detectors; Cadmium Zinc Telluride; crystal growth; semiconductor growth; semiconductor materials; semiconductor radiation detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2016964

Filename

5204644