Title :
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-Ray Detector Material
Author :
Zappettini, Andrea ; Zha, Mingzheng ; Marchini, Laura ; Calestani, Davide ; Mosca, Roberto ; Gombia, Enos ; Zanotti, Lucio ; Zanichelli, Massimiliano ; Pavesi, Maura ; Auricchio, Natalia ; Caroli, Ezio
Author_Institution :
IMEM-CNR, Rice Univ., Parma, Italy
Abstract :
Two-inch-diameter CdZnTe crystals doped with indium were grown by the boron oxide encapsulated vertical Bridgman technique. The crystals showed large single crystalline yield and low etch pit density. The background impurity content was dominated by boron in concentration lower than 1 ppm. High resistivity was obtained and a procedure for contact preparation was developed. The mobility-lifetime product of the material was determined by both X-ray irradiation and photocurrent spectroscopy. The X-ray detector prepared with this material showed good spectroscopic performance.
Keywords :
II-VI semiconductors; X-ray detection; X-ray effects; cadmium compounds; crystal growth from melt; electrical resistivity; etching; indium; photoconductivity; semiconductor counters; semiconductor doping; zinc compounds; CdZnTe:In; X-ray detector; X-ray irradiation; boron concentration; boron oxide encapsulated vertical Bridgman technique; indium doping; low etch pit density; mobility-lifetime product; photocurrent spectroscopy; resistivity; size 2 inch; two-inch-diameter semiconductor crystals; Boron; Conductivity; Crystalline materials; Crystallization; Crystals; Etching; Impurities; Indium; Spectroscopy; X-ray detectors; Cadmium Zinc Telluride; crystal growth; semiconductor growth; semiconductor materials; semiconductor radiation detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2016964
