A new charge-pumping technique for profiling the interface-states and oxide-trapped charges in MOSFETs

A new charge-pumping method has been developed to characterize the hot-carrier induced local damage. By holding the rising and falling slopes of the gate pulse constant and then varying the high-level (V_GH) and base-level (V_GL) voltages, the lateral distribution of interface-states (N_it(x)) and oxide-trapped charges (Q_ox(x)) can be profiled. The experimental results show that during extracting Q_ox(x) after hot-carrier stress, a contradictory result occurs between the extraction methods by varing the high-level (V_GH) and base-level (V_GL) voltages. As a result, some modifications are made to eliminate the perturbation induced by the generated interface-states after hot-carrier stress for extracting Q_ox(x)