• DocumentCode
    1299493
  • Title

    Measurement of heterojunction bipolar transistor thermal resistance based on a pulsed I-V system

  • Author

    Snowden, C.M.

  • Volume
    33
  • Issue
    1
  • fYear
    1997
  • fDate
    1/2/1997 12:00:00 AM
  • Firstpage
    100
  • Lastpage
    101
  • Abstract
    The thermal resistance (RTH) of power heterojunction bipolar transistors (HBTs) is determined using a pulsed I-V measurement technique. RTH has been found to vary with power dissipation and this has been attributed to the decrease in thermal conductivity of GaAs. Good agreement has been found between a theoretical model and experimental results
  • Keywords
    heterojunction bipolar transistors; power bipolar transistors; semiconductor device models; thermal conductivity; thermal resistance; power dissipation; power heterojunction bipolar transistors; pulsed I-V system; theoretical model; thermal conductivity; thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970059
  • Filename
    555113
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1299493