Title :
Measurement of heterojunction bipolar transistor thermal resistance based on a pulsed I-V system
fDate :
1/2/1997 12:00:00 AM
Abstract :
The thermal resistance (RTH) of power heterojunction bipolar transistors (HBTs) is determined using a pulsed I-V measurement technique. RTH has been found to vary with power dissipation and this has been attributed to the decrease in thermal conductivity of GaAs. Good agreement has been found between a theoretical model and experimental results
Keywords :
heterojunction bipolar transistors; power bipolar transistors; semiconductor device models; thermal conductivity; thermal resistance; power dissipation; power heterojunction bipolar transistors; pulsed I-V system; theoretical model; thermal conductivity; thermal resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970059
