DocumentCode
1299555
Title
Comparison of the new VBIC and conventional Gummel-Poon bipolar transistor models
Author
Cao, Xiaochong ; McMacken, J. ; Stiles, K. ; Layman, P. ; Liou, Juin J. ; Oritz-Conde, A. ; Moinian, S.
Author_Institution
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Volume
47
Issue
2
fYear
2000
fDate
2/1/2000 12:00:00 AM
Firstpage
427
Lastpage
433
Abstract
A new bipolar transistor model called VBIC has recently been developed and is likely to replace the Gummel-Poon model as the new industry standard bipolar transistor model. This paper focuses on the comparison of the VBIC and Gummel-Poon models under the DC operations. The extraction and optimization procedure coded in S+ statistical language and required for VBIC simulation is also developed and presented
Keywords
bipolar transistors; electronic engineering computing; equivalent circuits; optimisation; semiconductor device models; DC operations; Gummel-Poon model; S+ statistical language; VBIC model; VBIC simulation; bipolar transistor models; extraction procedure; industry standard transistor model; optimization procedure; Bipolar integrated circuits; Bipolar transistor circuits; Bipolar transistors; Circuit simulation; Computer industry; Equivalent circuits; Helium; Integrated circuit modeling; Standards development; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.822290
Filename
822290
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