Current induced degradation in GaAs HBT´s

Author

Adlerstein, Michael G. ; Gering, Joseph M.

Author_Institution

Raytheon Adv. Device Center, Andover, MA, USA

Volume

47

Issue

2

fYear

2000

fDate

2/1/2000 12:00:00 AM

Firstpage

434

Lastpage

439

Abstract

A physical model for observed current gain degradation in GaAs heterojunction bipolar transistors (HBT´s) is suggested in terms of a parameterized mathematical description of accumulating junction damage. The model and measurement suggest a positive correlation between high initial values of DC current gain and longer time to failure. Statistical analysis of accelerated stress failure data at 10 kA/cm² for InGaP-GaAs HBT´s was conducted. The result shows projected median time to failure (MTTF) of more than 10⁸ h at a junction temperature of 100°C. The standard deviation is 0.6 and the activation energy is 1.5 eV

Keywords

III-V semiconductors; failure analysis; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; semiconductor device reliability; statistical analysis; 100 C; 1E8 hr; GaAs HBT; InGaP-GaAs; MTTF; accelerated stress failure data; current gain degradation; current induced degradation; damage accumulation model; heterojunction bipolar transistors; junction damage; median time to failure; physical model; statistical analysis; stress tests; Acceleration; Current measurement; Degradation; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Mathematical model; Statistical analysis; Stress; Time measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.822291

Filename

822291