Gate-All-Around Poly-Si TFTs With Single-Crystal-Like Nanowire Channels

Author

Kang, Tsung-Kuei ; Liao, Ta-Chuan ; Lin, Chia-Min ; Liu, Han-Wen ; Wang, Fang-Hsing ; Cheng, Huang-Chung

Author_Institution

Dept. of Electron. Eng. ing, Feng Chia Univ., Taichung, Taiwan

Volume

32

Issue

9

fYear

2011

Firstpage

1239

Lastpage

1241

Abstract

The gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with single-crystal-like nanowire (NW) channels (SCLNCs) are demonstrated and characterized. Via the nanoscale nitride spacer, the Si NW can be easily transformed within one crystalline grain of the two-shot sequential-lateral-solidification poly-Si film. As compared with the planar ones, the GAA-SCLNC TFTs showed more excellent characteristics. The results clearly show that the variations of device characteristics can be reduced by increasing the numbers of NWs in the channels and an average mobility above 410 cm²/V·s with a low standard deviation can be achieved for the GAA-SCLNC TFTs with 20-NW channels.

Keywords

elemental semiconductors; grain boundaries; nanowires; silicon; thin film transistors; NW channel; SCLNC; Si; gate-all-around poly Si TFT; single-crystal-like nanowire channel; thin-film transistor; two-shot sequential-lateral-solidiflcation poly Si film; Fabrication; Logic gates; Performance evaluation; Silicon; Thin film transistors; Field-effect mobility; gate-all-around (GAA); nanowire (NW); nitride spacer; sequential lateral solidification (SLS); single-crystalline-like;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2160146

Filename

5986683