• DocumentCode
    1299586
  • Title

    A p-channel MOS synapse transistor with self-convergent memory writes

  • Author

    Diorio, Chris

  • Author_Institution
    Dept. of Comput. Sci. & Eng., Washington Univ., Seattle, WA, USA
  • Volume
    47
  • Issue
    2
  • fYear
    2000
  • fDate
    2/1/2000 12:00:00 AM
  • Firstpage
    464
  • Lastpage
    472
  • Abstract
    We have developed a p-channel floating-gate-MOS synapse transistor for silicon-learning applications. The synapse stores a nonvolatile analog weight by means of charge on its floating gate, modifies this weight bidirectionally using electron tunneling and hot-electron injection, and allows simultaneous memory reading and writing. The synapse also learns locally-its weight updates depend only on the applied terminal voltages and on the stored weight. We fabricated an array of synapses that computed both the array output, and the weight updates, in parallel. We also demonstrated a self-convergent write procedure that permitted accurate initialization of the synapse weights. Our pFET synapse is small, and is operated at subthreshold current levels; it will permit the development of dense, low-power, silicon learning systems
  • Keywords
    CMOS memory circuits; MOSFET; analogue processing circuits; analogue storage; hot carriers; tunnelling; accurate initialization; applied terminal voltages; electron tunneling; floating gate charge; floating-gate-MOS transistor; hot-electron injection; nonvolatile analog weight; p-channel MOS synapse transistor; pFET synapse; self-convergent memory writes; self-convergent write procedure; silicon-learning applications; simultaneous memory reading/writing; stored weight; subthreshold current levels; synapse array; synapse weights; weight updates; Concurrent computing; MOSFETs; Nonvolatile memory; Read-write memory; Secondary generated hot electron injection; Silicon; Subthreshold current; Tunneling; Voltage; Writing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.822295
  • Filename
    822295