The 2.45 GHz 36 W CW Si recessed gate type SIT with high gain and high voltage operation

Author

Nishizawa, Jun-ichi ; Motoya, Kaoru ; Itoh, Akira

Author_Institution

Semicond. Res. Inst., Sendai, Japan

Volume

47

Issue

2

fYear

2000

fDate

2/1/2000 12:00:00 AM

Firstpage

482

Lastpage

487

Abstract

The Si microwave recess gate type SIT (Static Induction Transistor) has been fabricated and the high drain blocking voltage up to 140 V with high gain was obtained. The power gain of 13.7 dB up to 1.7 GHz, 10 dB at 2 GHz, 6 dB at 3 GHz, and the maximum frequency of oscillation of 4 GHz in common gate configuration have been realized. The CW output power of 36 W (3.1 dB gain, η=41%) at 2.45 GHz and 26 W (10 dB gain, η=60%) at 900 MHz in common gate operation and 12.9 W (3.3 dB gain, η=56%) at 2.04 GHz in common source operation with the drain bias voltages 50 to 60 V have been realized, respectively

Keywords

elemental semiconductors; microwave field effect transistors; microwave power transistors; power field effect transistors; silicon; static induction transistors; 12.9 to 36 W; 3.1 to 13.7 dB; 50 to 140 V; 900 MHz to 4 GHz; CW output power; Si; Si recessed gate type SIT; common gate configuration; high drain blocking voltage; high gain; high voltage operation; microwave SIT; power gain; Capacitance; Electrodes; Etching; FETs; Frequency; Gain; MOSFETs; Roentgenium; Surface resistance; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.822297

Filename

822297