Title :
Lower limit of method for the extraction of ionization coefficients from the electrical characteristics of heterojunction bipolar transistors
Author :
Shamir, N. ; Ritter, D.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
fDate :
2/1/2000 12:00:00 AM
Abstract :
The error contributed by the Early effect to the ionization coefficient obtained from the characteristics of heterojunction bipolar transistors (HBTs) is calculated. For the case of InP-GaInAs HBTs, the Early effect does not introduce a significant error at low electric fields. For the case of HBTs with Ga0.28In0.72As 0.61P0.39 (λ=1.3 μm) base and collector, the Early effect introduces a relatively large error at low electric fields, A procedure for correcting this error is outlined. It is found that the low field ionization coefficient in Ga0.28In0.72As0.61P0.39 exhibits an anomalous low field behavior, similar to that of Ga0.47 In0.53As
Keywords :
field ionisation; heterojunction bipolar transistors; impact ionisation; semiconductor device breakdown; Early effect; Ga0.28In0.72As0.61P0.39 ; Ga0.47In0.53As; HBT; InP-GaInAs; anomalous low field behavior; electrical characteristics; heterojunction bipolar transistors; ionization coefficients extraction; low electric fields; Electric breakdown; Electric variables; Electrons; Equations; Error correction; Gain measurement; Heterojunction bipolar transistors; Impact ionization; Indium phosphide; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
