• DocumentCode
    1299652
  • Title

    Resonant interband tunnelling diode with high peak current density

  • Author

    Kitabayashi, H. ; Waho, T. ; Yamamoto, Manabu

  • Author_Institution
    NTT Syst. Electron. Labs., Atsugi
  • Volume
    33
  • Issue
    1
  • fYear
    1997
  • fDate
    1/2/1997 12:00:00 AM
  • Firstpage
    102
  • Lastpage
    104
  • Abstract
    Peak current densities (Ip) as high as 1.3×105 A/cm2 with peak-to-valley current ratios of 3.7 are reported for InAs/AlSb/GaSb/AlSb/InAs double-barrier resonant interband tunnelling diodes. The fact that 1-monolayer-thick AlSb barriers exist between the InAs and GaSb layers is essential in obtaining such a high value of Ip
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; resonant tunnelling diodes; InAs-AlSb-GaSb-AlSb-InAs; double-barrier resonant interband tunnelling diode; negative resistance; peak current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970019
  • Filename
    555115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1299652