Temperature Dependence of Hysteresis Effect in Partially Depleted Silicon-on-Insulator MOSFETs

Author

Luo, Jiexin ; Chen, Jing ; Jianhua Zhuo ; Wu, Qingqing ; Chai, Zhan ; Wang, Xi

Author_Institution

State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China

Volume

12

Issue

1

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

63

Lastpage

67

Abstract

The hysteresis effect on the output characteristics, which originates from the floating-body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, at different temperatures between 25 °C and 125 °C. For a better understanding of the hysteresis characteristics, the authors developed I_D hysteresis which is defined as the difference between I_D versus V_D forward sweep and reverse sweep. The fabricated devices show positive and negative peaks in Id hysteresis. The experimental results show that I_D hysteresis declined as the operating temperature increases. Based on the measurement, we have demonstrated the temperature dependence of hysteresis effect in PD SOI MOSFETs.

Keywords

MOSFET; hysteresis; silicon-on-insulator; PD SOI MOSFET; Si; floating-body effect; forward sweep; hysteresis effect; partially-depleted silicon-on-insulator MOSFET; reverse sweep; temperature dependence; Hysteresis; Logic gates; MOSFET circuits; MOSFETs; Temperature; Temperature dependence; Temperature measurement; Hysteresis; MOSFET; SOI technology; partially depleted (PD) silicon-on-insulator (SOI); temperature;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2011.2165282

Filename

5986697