Title :
Experimental Methods for Defect Introduction Rates Determination in Multijunction Solar Cells
Author :
Gauffier, A. ; David, J.P. ; Gilard, O. ; Nuns, T. ; Inguimbert, C. ; Balocchi, A.
Author_Institution :
ONERA-DESP, Toulouse, France
Abstract :
We present and compare different experimental methods used to determine defect introduction rates in materials constituting trijunction solar cells. Most of the experimental methods correlates together and with an analytical modeling. Defect introduction rates values in GaInP and GaAs are presented over a wide range of NIELs; this result seems intrinsic to these two materials.
Keywords :
III-V semiconductors; deep level transient spectroscopy; electroluminescence; gallium arsenide; gallium compounds; photoluminescence; solar cells; GaAs; GaInP; GalnP; analytical modeling; deep level transient spectroscopy; defect introduction rates; electroluminescence; multijunction solar cells; time-resolved photoluminescence; trijunction solar cells; Degradation; Electroluminescence; Electrons; Gallium arsenide; Laser theory; Optical pulses; Photoluminescence; Photovoltaic cells; Protons; Spectroscopy; Deep level transient spectroscopy (DLTS); Multijunction solar cells; defect introduction rate; electroluminescence; time-resolved photoluminescence (TRPL);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2013623
