Title :
TID Test of an 8-Gbit NAND Flash Memory
Author :
Schmidt, H. ; Grürmann, K. ; Nickson, B. ; Gliem, F. ; Harboe-Sørensen, R.
Author_Institution :
Tech. Univ. Braunschweig, Braunschweig, Germany
Abstract :
We report on new results of TID tests on an advanced 8-Gbit NAND-Flash memory. Data error percentage and standby current depend strongly on operational mode. Preventive memory refresh is proposed to move the first error occurrence to significant higher dose values. The count of erase cycles until wear out is not affected by the accumulated dose.
Keywords :
NAND circuits; error analysis; flash memories; radiation effects; 8-Gbit NAND-flash memory; TID tests; data error percentage; operational mode; Bit rate; Data structures; Dosimetry; Ionization chambers; Packaging; SDRAM; Solid state circuits; Telemetry; Testing; Data refresh; NAND-flash; TID; standby current;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2009982
