• DocumentCode
    1299721
  • Title

    TID Test of an 8-Gbit NAND Flash Memory

  • Author

    Schmidt, H. ; Grürmann, K. ; Nickson, B. ; Gliem, F. ; Harboe-Sørensen, R.

  • Author_Institution
    Tech. Univ. Braunschweig, Braunschweig, Germany
  • Volume
    56
  • Issue
    4
  • fYear
    2009
  • Firstpage
    1937
  • Lastpage
    1940
  • Abstract
    We report on new results of TID tests on an advanced 8-Gbit NAND-Flash memory. Data error percentage and standby current depend strongly on operational mode. Preventive memory refresh is proposed to move the first error occurrence to significant higher dose values. The count of erase cycles until wear out is not affected by the accumulated dose.
  • Keywords
    NAND circuits; error analysis; flash memories; radiation effects; 8-Gbit NAND-flash memory; TID tests; data error percentage; operational mode; Bit rate; Data structures; Dosimetry; Ionization chambers; Packaging; SDRAM; Solid state circuits; Telemetry; Testing; Data refresh; NAND-flash; TID; standby current;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2008.2009982
  • Filename
    5204682
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1299721