• DocumentCode
    1299729
  • Title

    Trap generation in CVD SiO2 subjected to 253.7 nm ultraviolet irradiation

  • Author

    Ling, C.H. ; Cheng, Z.Y.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Univ. of Singapore
  • Volume
    33
  • Issue
    1
  • fYear
    1997
  • fDate
    1/2/1997 12:00:00 AM
  • Firstpage
    104
  • Lastpage
    105
  • Abstract
    Charge generation in CVD SiO2 on Si substrate, subjected to 253.7 nm ultraviolet irradiation, is observed from variation in the effective minority carrier lifetime in Si. The carrier lifetime exhibits a minimum, a maximum, and a second minimum, before saturation. This is consistent with changes in the silicon surface potential which controls surface recombination, as injected electrons are captured by generated SiO2 traps
  • Keywords
    CVD coatings; carrier lifetime; electron traps; insulating thin films; minority carriers; radiation effects; silicon compounds; surface potential; surface recombination; 253.7 nm; CVD SiO2; Si substrate; SiO2; charge generation; electron injection; minority carrier lifetime; surface potential; surface recombination; trap generation; ultraviolet irradiation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970035
  • Filename
    555116
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1299729