DocumentCode :
1299788
Title :
Parameter Variation Tolerance and Error Resiliency: New Design Paradigm for the Nanoscale Era
Author :
Ghosh, Swaroop ; Roy, Kaushik
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Volume :
98
Issue :
10
fYear :
2010
Firstpage :
1718
Lastpage :
1751
Abstract :
Variations in process parameters affect the operation of integrated circuits (ICs) and pose a significant threat to the continued scaling of transistor dimensions. Such parameter variations, however, tend to affect logic and memory circuits in different ways. In logic, this fluctuation in device geometries might prevent them from meeting timing and power constraints and degrade the parametric yield. Memories, on the other hand, experience stability failures on account of such variations. Process limitations are not exhibited as physical disparities only; transistors experience temporal device degradation as well. Such issues are expected to further worsen with technology scaling. Resolving the problems of traditional Si-based technologies by employing non-Si alternatives may not present a viable solution; the non-Si miniature devices are expected to suffer the ill-effects of process/temporal variations as well. To circumvent these nonidealities, there is a need to design ICs that can adapt themselves to operate correctly under the presence of such inconsistencies. In this paper, we first provide an overview of the process variations and time-dependent degradation mechanisms. Next, we discuss the emerging paradigm of variation-tolerant adaptive design for both logic and memories. Interestingly, these resiliency techniques transcend several design abstraction levels-we present circuit and microarchitectural techniques to perform reliable computations in an unreliable environment.
Keywords :
integrated circuit design; integrated circuit reliability; integrated memory circuits; logic circuits; transistors; IC; circuit techniques; error resiliency; integrated circuits; logic circuits; memory circuits; microarchitectural techniques; process parameter variation tolerance; transistor dimension scaling; variation-tolerant adaptive design; Degradation; Delay; Fluctuations; Integrated circuit reliability; Transistors; Digital signal processing; graceful quality degradation; low power; process variations; process-tolerant design; reliability; robust design; voltage scaling;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/JPROC.2010.2057230
Filename :
5551169
Link To Document :
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