Title :
High-speed operation of static binary frequency divider using resonant tunnelling diodes and HEMTs
Author :
Matsuzaki, Hideaki ; Arai, Kenta ; Maezawa, K. ; Osaka, J. ; Yamamoto, Manabu ; Otsuji, Taiichi
Author_Institution :
NTT Syst. Electron. Labs., Kanagawa
fDate :
1/8/1998 12:00:00 AM
Abstract :
A new circuit technology using resonant tunnelling diodes and HEMTs makes the toggle frequency ftoggle of a static binary frequency divider close to the cutoff frequency ft of the used 0.7 μm-gate HEMTs. ftoggle and ft are 34 and 38 GHz, respectively. This technology is promising for use in high-speed logic circuits
Keywords :
HEMT integrated circuits; field effect logic circuits; frequency dividers; resonant tunnelling diodes; 0.7 micron; 34 GHz; 38 GHz; HEMTs; RTD; cutoff frequency; high-speed logic circuits; high-speed operation; resonant tunnelling diodes; static binary frequency divider; toggle frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980103
