• DocumentCode
    1299810
  • Title

    Low temperature VUV-assisted oxidation of Ge

  • Author

    Craciun, V. ; Hutton, B. ; Williams, D.E. ; Boyd, I.W.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
  • Volume
    34
  • Issue
    1
  • fYear
    1998
  • fDate
    1/8/1998 12:00:00 AM
  • Firstpage
    71
  • Lastpage
    72
  • Abstract
    Direct photo-oxidation of germanium at temperatures <400°C using vacuum ultraviolet (VUV) radiation from an excimer lamp has been investigated. The oxidation rate of 0.1 nm/min is significantly faster than conventional thermal oxidation. Single wavelength ellipsometry, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy measurements indicate that the grown layers are stoichiometric GeO2
  • Keywords
    Fourier transform spectra; X-ray photoelectron spectra; elemental semiconductors; ellipsometry; germanium; infrared spectra; oxidation; 400 C; Fourier transform infrared spectroscopy; Ge oxidation; Ge-GeO2; X-ray photoelectron spectroscopy; direct photo-oxidation; excimer lamp; low temperature VUV-assisted oxidation; single wavelength ellipsometry; stoichiometric GeO2 layers; vacuum ultraviolet radiation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980072
  • Filename
    654528
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1299810