DocumentCode
1299891
Title
Electrical Characteristics of the Concentric-Shape Carbon Nanotube Network Device in pH Buffer Solution
Author
Cheon, Jun Ho ; Lim, Jaeheung ; Seo, Sung Min ; Woo, Jun-Myung ; Kim, Seok Hyang ; Kwon, Yongjoo ; Ko, Jung Woo ; Kang, Tae June ; Kim, Yong Hyup ; Park, Young June
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
Volume
57
Issue
10
fYear
2010
Firstpage
2684
Lastpage
2689
Abstract
A carbon nanotube network device having concentric-shaped electrodes (source and drain) is analyzed to examine the "self-gating" effect of various pH buffer solutions on its electrical properties. Using the 2-D homogeneous percolation theory, current-voltage characteristics of the devices are described as the classical MOSFET formula, in which the device is modeled as the p-type transistor with positive threshold voltage and the gate is tied with the drain (at positive bias) or source (at negative bias). To determine the apparent threshold voltage change due to the corresponding pH value, the ∂VD/∂ID (VD:drain voltage; ID:drain current) curve is extracted from the measured current-voltage characteristics to find VD_SAT(= -VTH, VQS = 0). A threshold voltage shift according to the pH value is observed without an external gate electrode, showing the possibility of relaxing the requirement of the external gate electrode. By grafting protonation/deprotonation which occurs in the carboxylated single-walled carbon nanotubes, the decaying current as pH increases is explained. Better sensitivity according to the operation regime is examined by the device modeling.
Keywords
MOSFET; carbon nanotubes; chemical sensors; electrodes; pH measurement; percolation; 2-D homogeneous percolation theory; MOSFET; carboxylated single-walled carbon nanotubes; concentric-shape carbon nanotube network device; concentric-shaped electrodes; current-voltage characteristics; electrical properties; external gate electrode; p-type transistor; pH buffer solution self-gating effect; threshold voltage shift; Carbon nanotubes; Electrodes; Logic gates; Resistance; Sensitivity; Threshold voltage; Transistors; Carbon nanotube chemical sensor; carbon nanotube network (CNN); self-gating effect;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2010.2062518
Filename
5551185
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