• DocumentCode
    1299935
  • Title

    Comparative Study of \\hbox {1}/f Noise Degradation Caused by Fowler–Nordheim Tunneling Stress in Silicon Nanowire Transistors and FinFETs

  • Author

    Wei, Chengqing ; Xiong, Yong-Zhong ; Zhou, Xing ; Singh, Navab ; Yuan, Xiao-Jun ; Lo, Guo Qiang ; Chan, Lap ; Kwong, Dim-Lee

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • Volume
    57
  • Issue
    10
  • fYear
    2010
  • Firstpage
    2774
  • Lastpage
    2779
  • Abstract
    The purpose of this brief is to investigate the degradation of 1/f noise levels that is caused by Fowler-Nordheim (FN) tunneling stress for both the silicon nanowire transistor (SNWT) and the FinFET. The oxide traps that are generated under constant-voltage FN stress are extracted from the 1/f noise characteristics. Under the same FN stress voltage and time, the amount of oxide traps that is generated in the cylindrical-channel SNWT is much larger than that generated in the planar-channel FinFET, which is due to the increased electric field at the SiO2/Si interface that is caused by the cylindrical architecture of the SNWT.
  • Keywords
    1/f noise; electric fields; field effect transistors; nanowires; 1/f noise degradation; FinFET; Fowler-Nordheim tunneling stress; SiO2-Si; electric field; silicon nanowire transistors; FinFETs; Logic gates; Noise; Silicon; Solid modeling; Stress; Tunneling; FinFET; Fowler–Nordheim (FN) tunneling; gate-all-around (GAA); low-frequency noise; silicon nanowire;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2010.2061853
  • Filename
    5551192
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1299935