Title :
TID Sensitivity of NAND Flash Memory Building Blocks
Author :
Bagatin, Marta ; Cellere, Giorgio ; Gerardin, Simone ; Paccagnella, Alessandro ; Visconti, Angelo ; Beltrami, Silvia
Author_Institution :
Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova, Italy
Abstract :
NAND Flash memories are the leader among high capacity non-volatile memory technologies and are becoming attractive also for radiation harsh environments, such as space. For these applications, a careful assessment of their sensitivity to radiation is needed. In this contribution, we analyze TID effects on the many different building blocks of NAND Flash memories, including the charge pumps, row-decoder, and floating gate array. Since each of these elements have dedicated circuital and technological characteristics, we identify and study the characteristic failure mode for each part.
Keywords :
random-access storage; NAND flash memory; TID sensitivity; charge pumps; circuital characteristics; failure mode; floating gate array; high capacity nonvolatile memory technology; radiation harsh environments; row-decoder; total ionizing dose; Charge pumps; Circuit testing; Current supplies; Flash memory; Ionizing radiation; Manufacturing; Nonvolatile memory; Space technology; Voltage; X-rays; Flash memories; X-rays; total dose effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2016095
