Title :
550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs
Author :
Kordos, P. ; Forster, A. ; Marso, M. ; Ruders, F.
Author_Institution :
Inst. of Thin Film & Ion Technol., Res. Centre Julich, Germany
fDate :
1/8/1998 12:00:00 AM
Abstract :
The authors demonstrate that a 550 GHz bandwidth photodetector can be fabricated on low-temperature grown MBE GaAs. The pulse response shows 0.4 and 0.6 ps rise and fall times, respectively. The bandwidth is in agreement with a value calculated using a carrier lifetime of 0.2 ps, measured by femtosecond time-resolved reflectivity, and a capacitance of 0.014 fF/μm2, determined from microwave measurements. The device bandwidth is RC limited
Keywords :
III-V semiconductors; capacitance; carrier lifetime; gallium arsenide; metal-semiconductor-metal structures; molecular beam epitaxial growth; photodetectors; semiconductor growth; substrates; 0.2 to 0.6 ps; 550 GHz; GaAs; MSM photodetector; RC limited bandwidth; capacitance; carrier lifetime; low-temperature grown MBE GaAs; molecular-beam epitaxial GaAs; pulse response;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980039
