Title :
Colour detection using buried triple pn junction structure implemented in BiCMOS process
Author :
Chouikha, M.B. ; Lu, G.N. ; Sedjil, M. ; Sou, G.
Author_Institution :
Lab. des Instrum. et Syst., Univ. Pierre et Marie Curie, Paris, France
fDate :
1/8/1998 12:00:00 AM
Abstract :
A buried triple pn junction structure for colour detection is presented which can be implemented in a bipolar or BiCMOS process. The spectral responsivity of the device is characterised by three bandpass curves, selecting, respectively, blue, green and red components of a colour. A linear transformation method is developed for the colorimetric characterisation of the device. Colour differences between the detector specification and that of the CIE standard system have been evaluated. A mean colour difference of 2.15 has been obtained
Keywords :
BiCMOS integrated circuits; colour; p-n junctions; photodetectors; BiCMOS process; CIE standard system; buried triple p-n junction structure; colorimetric characterisation; colour detection; linear transformation method; spectral responsivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980085
