DocumentCode :
1300115
Title :
Dewetting During the Crystal Growth of (Cd,Zn)Te:In Under Microgravity
Author :
Sylla, Lamine ; Fauler, Alex ; Fiederle, Michael ; Duffar, Thierry ; Dieguez, Ernesto ; Zanotti, Lucio ; Zappettini, Andrea ; Roosen, Gérald
Author_Institution :
Freiburger Materialforschungszentrum (FMF), Albert-Ludwigs-Univ., Freiburg, Germany
Volume :
56
Issue :
4
fYear :
2009
Firstpage :
1747
Lastpage :
1751
Abstract :
The phenomenon of ldquodewettingrdquo associated with the Vertical Bridgman (VB) crystal growth technique leads to the growth of a crystal without contact with the crucible. One dramatic consequence of this modified VB process is the reduction of structural defects within the crystal. It has been observed in several microgravity experiments for different semiconductor crystals. This work is concentrated on the growth of high resistivity (Cd,Zn)Te:In (CZT) crystals by achieving the phenomenon of dewetting under microgravity condition and its application in the processing of CZT detectors. Two Cd0.9Zn0.1Te:In crystals were grown in space on the Russian FOTON satellite in the POLIZON-M facility in September 2007 (mission M3). At the end of the preliminary melting phase of one crystal, a Rotating Magnetic Field (RMF) was applied in order to reduce the typical tellurium clusters within the melt before the pulling. The other crystal was superheated with 20 K above the melting point before the pulling. A third reference crystal has been grown on the ground in similar thermal conditions. Profiles measurements of the space grown crystals surface gave the evidence of a successful dewetting during the crystal growth. Characterization methods such as IR microscopy and CoReMa have been performed on the three crystals. CZT detectors have been processed from the grown part of the different crystals. The influence of the dewetting on the material quality and the detector properties completes the study.
Keywords :
II-VI semiconductors; cadmium compounds; crystal growth from melt; indium; melting point; semiconductor counters; semiconductor doping; semiconductor growth; wetting; wide band gap semiconductors; zero gravity experiments; zinc compounds; Cd0.9Zn0.1Te:In; IR microscopy; POLIZON-M facility; Russian FOTON satellite; crystal growth; dewetting; melting point; microgravity experiments; rotating magnetic field; semiconductor crystals; semiconductor detectors; structural defects; tellurium clusters; vertical Bridgman crystal; Conductivity; Crystalline materials; Crystals; Detectors; Magnetic field measurement; Microscopy; Satellites; Space missions; Tellurium; Zinc; CZT characterization; CZT detectors; CZT growth;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2009.2019599
Filename :
5204754
Link To Document :
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