Title :
High-speed 1.5 μm self-aligned constricted mesa lasers grown entirely by MOCVD
Author :
Hirayama, Yuzo ; Furuyama, H. ; Morinaga, M. ; Suzuki, Nobuhiro ; Kushibe, M. ; Eguchi, Kiyoshi ; Nakamura, Mitsutoshi
Author_Institution :
Toshiba Res. & Dev. Centre, Kawasaki
fDate :
4/14/1988 12:00:00 AM
Abstract :
A self-aligning (SA) process technique to fabricate constricted mesa (CM) lasers is proposed. The controllability of GaInAsP active region volume and InP lateral confining layer widths were greatly improved. Lasers grown entirely by metalorganic chemical vapour deposition (MOCVD) showed very small variation in threshold currents ( Ith=15.2±1.1 mA) and in stray junction capacitances (C=1.62±0.08 pF). A record bandwidth of 10 GHz in the 1.5 μm-wavelength region was demonstrated
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 1.62 pF; 10 GHz; 15.2 mA; GaInAsP active region; GaInAsP-InP lasers; InP lateral confining layer widths; MOCVD; MOVPE; bandwidth; controllability; metalorganic chemical vapour deposition; self-aligned constricted mesa lasers; semiconductors; stray junction capacitances; threshold currents;
Journal_Title :
Electronics Letters
