DocumentCode :
1300173
Title :
Thallium Bromide Nuclear Radiation Detector Development
Author :
Churilov, Alexei V. ; Ciampi, Guido ; Kim, Hadong ; Cirignano, Leonard J. ; Higgins, William M. ; Olschner, Fred ; Shah, Kanai S.
Author_Institution :
Radiat. Monitoring Devices, Inc., Watertown, MA, USA
Volume :
56
Issue :
4
fYear :
2009
Firstpage :
1875
Lastpage :
1881
Abstract :
Thallium bromide (TlBr) is a dense, high-Z, wide bandgap semiconductor that has potential as an efficient, compact, room temperature nuclear radiation detector. In this paper we report on our recent progress in TlBr nuclear detector development. In particular, improvements in material purification have led to an order of magnitude increase in the mobility-lifetime product of electrons, (mutau)e, to as high as 5 times 10-3 cm2/V. This has enabled much thicker detectors with good charge collection to be fabricated. We fabricated and tested small pixel TlBr arrays up to 10 mm thick. The energy resolution ~2% FWHM at 662 keV was recorded with 5-10 mm thick devices without 3-D spectral correction. We also investigated the long-term detector stability and were able to constantly operate a thin (0.5 mm) detector for five months at -18degC, under an electric field and with irradiation.
Keywords :
carrier lifetime; electric field effects; electron mobility; materials preparation; radiation effects; semiconductor counters; thallium compounds; wide band gap semiconductors; TlBr; electric field; electron mobility-lifetime product; electron volt energy 662 keV; energy resolution; high-Z material; irradiation effect; material fabrication; size 5 mm to 10 mm; temperature -18 C; temperature 293 K to 298 K; thallium bromide nuclear radiation detector; wide bandgap semiconductor; Charge carriers; Crystalline materials; Electron mobility; Energy resolution; Photonic band gap; Purification; Radiation detectors; Raw materials; Semiconductor radiation detectors; Temperature; Gamma-ray spectrometer; TlBr; semiconductor radiation detector; thallium bromide; zone refining;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2009.2021424
Filename :
5204763
Link To Document :
بازگشت