Title :
High-speed front-illuminated GaInAsP/InP pin photodiode
Author :
Paslaski, J. ; Liu, Y.Y. ; Chen, Tiffani R. ; Yariv, Amnon
fDate :
4/14/1988 12:00:00 AM
Abstract :
Describes a high-speed front-illuminated GaInAsP/InP pin photodiode for use at the optical wavelength of 1.3 μm. The device is grown on an n+-InP substrate and uses polyimide both as a passivation layer and as a bonding pad holder to reduce parasitic capacitance. An optoelectronic sampling measurement of the impulse response shows a pulsewidth (FWHM) of 28 ps. A 3 dB bandwidth in excess of 18 GHz has been achieved
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; passivation; photodiodes; 1.3 micron; 18 GHz; 28 ps; GaInAsP-InP photodiode; InP; bandwidth; front-illuminated GaInAsP/InP pin photodiode; impulse response; optoelectronic sampling measurement; parasitic capacitance; polyimide bonding pad holder; polyimide passivation layer; pulsewidth; semiconductors;
Journal_Title :
Electronics Letters
