Electrorefraction in GaInAs/InP multiple quantum well heterostructures

Author

Zucker, J.E. ; Bar-Joseph, I. ; Sucha, G. ; Koren, U. ; Miller, B.I. ; Chemla

Author_Institution

AT&T Bell Labs., Holmdel, NJ

Volume

24

Issue

8

fYear

1988

fDate

4/14/1988 12:00:00 AM

Firstpage

458

Lastpage

460

Abstract

Reports the first absolute measurement of electric-field-induced changes in refractive index in GaInAs quantum well heterostructures. Even for wavelengths as far as 40 meV below the absorption edge, excitonic effects dominate electro-optic phase modulation. This effect close to resonance yields index changes two orders of magnitude larger than in bulk material. The authors find that the size of the index change, its dependence on applied voltage, and its behaviour with wavelength are well described in terms of the quantum confined Stark effect on excitonic absorption

Keywords

III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; semiconductor superlattices; GaInAs-InP; MQW; QCSE; absolute measurement; absorption edge; dependence on applied voltage; effect close to resonance; electric-field-induced changes in refractive index; electro-optic phase modulation; electrorefraction; excitonic effects; index change; multiple quantum well heterostructures; quantum confined Stark effect on excitonic absorption; semiconductors; wavelength dependence;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

Filename

8231