Title :
Cold-cathode emitter based on a metal-diamond tunneling junction
Author :
Lerner, P. ; Cutler, P.H. ; Miskovsky, N.M.
Author_Institution :
Dept. of Phys., Pennsylvania State Univ., University Park, PA, USA
fDate :
12/1/1997 12:00:00 AM
Abstract :
Recently Geis fabricated a composite cold cathode emitter made of diamond doped by substitutional nitrogen on a roughened metallic substrate, which is characterized by high field emission currents at very low power. Using an internal field emission mechanism through the Schottky barrier at the metal diamond interfaces to populate the conduction band of diamond, we have developed a quantitative theory to describe the operation of such a device. The calculated I-V characteristics are in good agreement with the experimental results of Geis, et al
Keywords :
Schottky barriers; cold-cathode tubes; diamond; electron field emission; tunnelling; C; I-V characteristics; Schottky barrier; cold-cathode emitter; conduction band; field emission currents; metal-diamond tunneling junction; quantitative theory; Cathodes; Conductive films; Electron emission; Nitrogen; Physics; Rough surfaces; Schottky barriers; Surface roughness; Surface treatment; Tunneling;
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
