• DocumentCode
    1300309
  • Title

    Recent experiments on vacuum breakdown of oxygen-free copper electrodes

  • Author

    Kobayashi, Shinichi

  • Author_Institution
    Dept. of Electr. & Electron. Syst. Eng., Saitama Univ., Japan
  • Volume
    4
  • Issue
    6
  • fYear
    1997
  • fDate
    12/1/1997 12:00:00 AM
  • Firstpage
    841
  • Lastpage
    847
  • Abstract
    The effects of the gas content, in situ sputter cleaning, annealing and a mirror finish of OFC (oxygen-free copper) electrodes on the electrical breakdown in a vacuum were investigated. The grade of the OFC meets the ASTM-F-68 class 1 standard. ECB (electrochemical buffing) or diamond turning was employed for obtaining a mirror finish. It was found that every one of parameters investigated, namely, low gas content, in situ sputter cleaning and annealing, increases the breakdown fields after conditioning due to repetitive breakdowns. In addition, a higher annealing temperature produced higher breakdown fields. The mirror finish reduced the required number of breakdowns (conditioning procedure by repetitive breakdowns) to improve the insulating capability of the vacuum gap. A breakdown field of ~250 MV/m was obtained by a combination of annealing at 700°C and a mirror finish by diamond turning. It has been pointed out that the combination of these treatments is necessary for obtaining higher breakdown fields. The effect of annealing and diamond turning is discussed on the basis of the recrystallization of copper and residual stresses on the surface
  • Keywords
    annealing; copper; electrodes; surface cleaning; vacuum breakdown; Cu; annealing; diamond turning; electrochemical buffing; gas content; in situ sputter cleaning; mirror finish; oxygen-free copper electrode; recrystallization; surface residual stress; vacuum breakdown; Annealing; Cleaning; Copper; Electric breakdown; Electrodes; Insulation; Mirrors; Temperature; Turning; Vacuum breakdown;
  • fLanguage
    English
  • Journal_Title
    Dielectrics and Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1070-9878
  • Type

    jour

  • DOI
    10.1109/94.654725
  • Filename
    654725