Title :
Novel pressure sensors with multilayer SOI structures
Author :
Chung, G.S. ; Kawahito, S. ; Ishida, Makoto ; Nakamura, T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Toyohashi Univ. of Technol., Japan
fDate :
6/7/1990 12:00:00 AM
Abstract :
A piezoresistive pressure sensor with multilayer SOI structures has been developed. First SOI layers were employed as an etch-stop layer. Double-heteroepitaxially grown second SOI layers were used as an electrically isolated strain gauge. This sensor has the advantages of high sensitivity and high temperature operation.
Keywords :
electric sensing devices; elemental semiconductors; piezoelectric transducers; pressure transducers; sensitivity; silicon; SiO 2-Si-Al 2O 3-Si-SiO 2; double heteroepitaxially grown layers; electrically isolated strain gauge; etch-stop layer; high sensitivity; high temperature operation; multilayer SOI structures; piezoresistive pressure sensor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900506
