DocumentCode
1300486
Title
Kink-free AlInAs/GaInAs/InP HEMTs grown by molecular beam epitaxy
Author
Luo, L.F. ; Longenbach, K.F. ; Wang, W.I.
Author_Institution
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Volume
26
Issue
12
fYear
1990
fDate
6/7/1990 12:00:00 AM
Firstpage
779
Lastpage
780
Abstract
Kink-free AlInAs/GaInAs/InP HEMTs have been fabricated from an MBE structure grown under normal growth condition. Devices with 1 mu m gate-length exhibit an extrinsic transconductance of 450 mS/mm and a maximum drain current of 600 mA/mm which represent the best results for 1 mu m gate devices. The DC output conductance shows no kink over the entire gate bias range. The elimination of the kink is attributed to the high quality AlInAs buffer layer and a low mismatch between the AlInAs buffer layer and InP substrate.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor growth; 1 micron; 450 mS; 600 mA; AlInAs-GaInAs-InP; DC output conductance; HEMTs; InP substrate; MBE structure; extrinsic transconductance; gate-length; high quality AlInAs buffer layer; kink free output; maximum drain current; molecular beam epitaxy; normal growth condition;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900508
Filename
52075
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