DocumentCode :
1300567
Title :
1.3-/spl mu/m emission of Nd:LaF/sub 3/ thin films grown by molecular beam epitaxy
Author :
Zhang, X. ; Lahoz, F. ; Serrano, C. ; Lacoste, G. ; Daran, E.
Author_Institution :
Lab. of Excited State Processes, Acad. Sinica, Changchun, China
Volume :
36
Issue :
2
fYear :
2000
Firstpage :
243
Lastpage :
247
Abstract :
The 1.3-/spl mu/m emission of Nd/sup 3+/-doped LaF/sub 3/ thin films grown on LaF/sub 3/ and CaF/sub 2/ [111] substrates by molecular beam epitaxy is reported. The waveguide behavior of the heteroepitaxial layers has been demonstrated and the refractive indexes measured. Guided spectra have been obtained from these layers using a prism-coupling technique. The 1.3-/spl mu/m emission corresponding to the 4F/sub 3/2//spl rarr//sup 4/I/sub 3/2/ transition has been characterized as a function of Nd/sup 3+/ concentration and temperature. The relative efficiencies of different excitation bands were compared. The optimum concentration for Nd/sup 3+/ dopant has been found to be about 1 at.%. A narrowing of the emission lines is observed in the homoepitaxial layers compared to the heteroepitaxial layers. The decay of the luminescence of the /sup 4/F/sub 3/2/ level measured at room temperature is similar for homoepitaxial and heteroepitaxial layers.
Keywords :
lanthanum compounds; laser transitions; molecular beam epitaxial growth; neodymium; optical fabrication; optical planar waveguides; photoluminescence; radiative lifetimes; refractive index; solid lasers; spectral line intensity; waveguide lasers; /sup 4/F/sub 3/2/ level; 1.3 mum; 298 K; 4F/sub 3/2/-/sup 4/I/sub 3/2/ transition; CaF/sub 2/ [111] substrate; LaF/sub 3/ substrate; LaF/sub 3/:Nd; Nd/sup 3+/; Nd/sup 3+/ dopant; Nd:LaF/sub 3/ thin films; concentration; emission lines; excitation bands; guided spectra; heteroepitaxial layers; homoepitaxial layers; luminescence; molecular beam epitaxy; optimum concentration; prism-coupling technique; refractive indexes; relative efficiencies; room temperature; temperature; waveguide behavior; Erbium-doped fiber amplifier; Luminescence; Molecular beam epitaxial growth; Neodymium; Optical fiber amplifiers; Optical fiber communication; Optical materials; Optical waveguides; Temperature measurement; Transistors;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.823471
Filename :
823471
Link To Document :
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