Cavity-length-dependent spectral and temporal characteristics of the gain switched V-groove quantum-wire laser

Author

Tae Geun Kim ; Suzuki, Y. ; Ogura, M.

Author_Institution

Electrotech. Lab., Ibaraki, Japan

Volume

12

Issue

2

fYear

2000

Firstpage

104

Lastpage

106

Abstract

The cavity-length-dependent spectral and temporal characteristics of a V-groove AlGaAs-GaAs quantum-wire (QWR) laser are investigated. At short cavity lasers less than 300-μm, a discrete wavelength switching from the first (n=1; 837.7 nm for the 800-μm cavity) to the second (n=2;826.5 nm for the 220-μm cavity) subbands occurs due to the increased threshold gain, resulting from the increased cavity loss. Utilizing this characteristic, ultrafast lasing behaviors at the n=1 and n=2 quantized transitions of the QWR, generated by the gain-switching method, are demonstrated and compared.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; quantum well lasers; semiconductor quantum wires; switching; 220 mum; 300 mum; 800 mum; 826.5 nm; 837.7 nm; AlGaAs-GaAs; AlGaAs-GaAs QWR laser; cavity loss; cavity-length-dependence; discrete wavelength switching; first subbands; gain switched V-groove quantum-wire laser; gain-switching method; quantized transitions; second subbands; short cavity lasers; spectral characteristics; temporal characteristics; threshold gain; ultrafast lasing behaviors; Laser transitions; Nonlinear optics; Optical pulse generation; Optical pumping; Optical saturation; Pulse generation; Semiconductor lasers; Threshold current; Ultrafast optics; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.823484

Filename

823484