Title :
25 Gbit/s 1.3 μm InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km)100 Gbit/s ethernet system
Author :
Fujisawa, T. ; Arai, Manabu ; Fujiwara, N. ; Kobayashi, Wataru ; Tadokoro, T. ; Tsuzuki, Ken ; Akage, Y. ; Iga, R. ; Yamanaka, T. ; Kano, F.
Author_Institution :
Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
A high-performance 1.3 mum lnGaAlAs electroabsorption modulator integrated with a DFB laser for the metro-area 100 Gbit/s Ethernet system (100GBASE-LR4 and -ER4) has been developed. 40 km transmission under 25 Gbit/s operation on singlemode fibre that is required for 100GBASE-ER4 application at 40degC is demonstrated for the first time.
Keywords :
III-V semiconductors; distributed feedback lasers; electroabsorption; gallium compounds; indium compounds; local area networks; modulators; semiconductor lasers; DFB laser; Ethernet system; InGaAlAs; electroabsorption modulator; singlemode fibre; size 1.3 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.1846
