DocumentCode
1300649
Title
Oxide-defined GaAs vertical-cavity surface-emitting lasers on Si substrates
Author
Xiong, Y. ; Zhou, Y. ; Zhu, Z.H. ; Lo, Y.H. ; Ji, C. ; Basher, S.A. ; Allerman, A.A. ; Hargett, T. ; Sieg, R. ; Choquette, K.D.
Author_Institution
Cornell Univ., Ithaca, NY, USA
Volume
12
Issue
2
fYear
2000
Firstpage
110
Lastpage
112
Abstract
By employing a reactive low-temperature wafer bonding technique, we have demonstrated oxide-defined 850 nm vertical-cavity surface-emitting lasers (VCSEL´s) on Si substrates. Devices reach a differential quantum efficiency of 53% and a light output power of 7.1 mW under room temperature and continuous-wave operation without a heat sink.
Keywords
gallium arsenide; heat sinks; laser transitions; oxidation; semiconductor lasers; surface emitting lasers; wafer bonding; 53 percent; 7.1 mW; 850 nm; GaAs; Si; Si substrates; VCSEL; continuous-wave operation; differential quantum efficiency; heat sink; light output power; mW under room temperature; oxide-defined GaAs vertical-cavity surface-emitting lasers; reactive low-temperature wafer bonding technique; room temperature; Gallium arsenide; Optical interconnections; Semiconductor lasers; Substrates; Surface emitting lasers; Temperature; Tensile stress; Vertical cavity surface emitting lasers; Very large scale integration; Wafer bonding;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.823486
Filename
823486
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