• DocumentCode
    1300662
  • Title

    Amorphous-si-based planar grating demultiplexers with total internal reflection grooves

  • Author

    Song, Jian ; Ding, J.F.

  • Author_Institution
    Inst. of Optoelectron., Shenzhen Univ., Shenzhen, China
  • Volume
    45
  • Issue
    17
  • fYear
    2009
  • Firstpage
    905
  • Lastpage
    906
  • Abstract
    Compact grating demultiplexers with total-internal-reflection (TIR) facets have been fabricated and characterised based on alpha-Si-on-SiO2 wafers. The loss of demultiplexers using TIR facets will be 3-5-dB lower than those using echelle facets. The demultiplexer has much more compact size compared with conventional silica-based devices. The dimension of the device is around half millimetre.
  • Keywords
    amorphous semiconductors; demultiplexing equipment; diffraction gratings; reflection; silicon compounds; SiO2; amorphous silicon; compact grating demultiplexers; echelle facets; planar grating demultiplexers; total internal reflection grooves;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.0789
  • Filename
    5207544