Data transmission over single-mode fiber by using 1.2-μm uncooled GaInAs-GaAs laser for Gb/s local area network

Author

Koyama, F. ; Schlenker, D. ; Miyamoto, T. ; Chen, Z. ; Matsutani, Akihiro ; Sakaguchi, T. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

Volume

12

Issue

2

fYear

2000

Firstpage

125

Lastpage

127

Abstract

We demonstrate 2-Gb/s data transmission through a 5-km-long standard single-mode fiber by using a GaAs-based 1.2-μm GaInAs-GaAs quantum well laser. The fabricated laser exhibits a high characteristic temperature of 140 K. The results indicate the possibility of Gigabit/s local area networks (LANs) using uncooled lasers (possibly surface-emitting lasers) operating at a 1.2-μm wavelength band.

Keywords

III-V semiconductors; data communication; gallium arsenide; indium compounds; laser transitions; optical fibre LAN; optical transmitters; quantum well lasers; surface emitting lasers; 1.2 mum; 1.2-/spl mu/m GaInAs-GaAs quantum well laser; 1.2-/spl mu/m wavelength band; 140 K; 2 Gbit/s; 5 km; GaInAs-GaAs; Gb/s local area network; Gigabit/s local area networks; data transmission; high characteristic temperature; single-mode fiber; standard single-mode fiber; surface-emitting lasers; uncooled GaInAs-GaAs laser; uncooled lasers; Chemical lasers; Data communication; Fiber lasers; Laser beam cutting; Optical fiber LAN; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.823491

Filename

823491