Low-threshold 1.3-μm InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy

Author

Yang, X. ; Heroux, J.B. ; Jurkovic, M.J. ; Wang, W.I.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

Volume

12

Issue

2

fYear

2000

Firstpage

128

Lastpage

130

Abstract

1.3-μm InGaAsN:Sb-GaAs single-quantum-well laser diodes have been grown by a solid source molecular beam epitaxy (MBE) using Sb as a surfactant. A record low threshold of 1.02 kA/cm² and a slope efficiency of 0.12 W/A are obtained for broad-area laser diodes under pulsed operation at room temperature. A characteristic temperature of 64 K and a lasing wavelength temperature dependence of 0.38 nm//spl deg/C are reported.

Keywords

III-V semiconductors; antimony; gallium arsenide; gallium compounds; indium compounds; laser beams; molecular beam epitaxial growth; optical fabrication; quantum well lasers; surfactants; 1.3 mum; 298 K; 64 K; InGaAsN:Sb-GaAs; broad-area laser diodes; characteristic temperature; laser threshold; lasing wavelength; molecular beam epitaxy; pulsed operation; room temperature; single-quantum-well laser diodes; single-quantum-well lasers; slope efficiency; solid source molecular beam epitaxy; surfactant; temperature dependence; Diode lasers; Epitaxial growth; Gallium arsenide; Laser beams; Molecular beam epitaxial growth; Optical pulses; Quantum well lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.823492

Filename

823492