DocumentCode
1300722
Title
Asymmetric gain induced by longitudinal spatial carrier burning in semiconductor lasers
Author
Huang, Yong-Zhen
Author_Institution
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
Volume
26
Issue
12
fYear
1990
fDate
6/7/1990 12:00:00 AM
Firstpage
783
Lastpage
784
Abstract
Nonlinear gain caused by dielectric corrugation resulting from the cavity standing wave of a lasing mode in semiconductor lasers is investigated using the perturbation approach. The results show that the nonlinear gain spectrum is asymmetric when the linewidth enhancement factor alpha not=0, and the possibility of single mode operation is greater at alpha =0.
Keywords
laser cavity resonators; laser modes; laser theory; optical hole burning; semiconductor junction lasers; asymmetric gain; cavity standing wave; dielectric corrugation; lasing mode; linewidth enhancement factor; longitudinal spatial carrier burning; nonlinear gain spectrum; perturbation approach; semiconductor lasers; single mode operation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900511
Filename
52078
Link To Document