Title :
Improvement of kink and beam steering characteristics of 0.98-μm GaInAs-GaInP high-power lasers utilizing channel ion implantation
Author :
Lee, Jung Keun ; Park, K.H. ; Jang, D.H. ; Cho, H.S. ; Nam, E.S. ; Pyun, K.E. ; Jeong, J.
Author_Institution :
Dept. of Electron. Eng., Korea Univ., Seoul, South Korea
Abstract :
We demonstrate a kink and beam steering free operation of 0.98-μm GaInAs-GaInP high-power ridge waveguide (RW) lasers utilizing channel ion implantation. The ion-implanted regions along the both sides of the ridge effectively suppressed the excitation of higher order lateral modes, which causes beam steering and kink. The maximum power without beam steering and kink has been achieved over 250 mW for channel ion-implanted RW lasers with 1.8-3.7-μm ridge width, compared to 120-mW maximum power without the channel ion implantation.
Keywords :
III-V semiconductors; MOCVD; beam steering; gallium arsenide; gallium compounds; indium compounds; ion implantation; laser beams; optical fabrication; ridge waveguides; semiconductor lasers; vapour phase epitaxial growth; waveguide lasers; 0.98 mum; 1.8 to 3.7 mum; 120 mW; 250 mW; GaInAs-GaInP; GaInAs-GaInP high-power lasers; beam steering characteristics; beam steering free operation; channel ion implantation; channel ion-implanted ridge waveguide lasers; high-power ridge waveguide lasers; higher order lateral modes; ion-implanted regions; kink characteristics; kink free operation; maximum power; ridge width; Beam steering; Fiber lasers; Ion implantation; Laser excitation; Laser modes; Optical waveguides; Power lasers; Pump lasers; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
