Improvement of kink and beam steering characteristics of 0.98-μm GaInAs-GaInP high-power lasers utilizing channel ion implantation

Author

Lee, Jung Keun ; Park, K.H. ; Jang, D.H. ; Cho, H.S. ; Nam, E.S. ; Pyun, K.E. ; Jeong, J.

Author_Institution

Dept. of Electron. Eng., Korea Univ., Seoul, South Korea

Volume

12

Issue

2

fYear

2000

Firstpage

140

Lastpage

142

Abstract

We demonstrate a kink and beam steering free operation of 0.98-μm GaInAs-GaInP high-power ridge waveguide (RW) lasers utilizing channel ion implantation. The ion-implanted regions along the both sides of the ridge effectively suppressed the excitation of higher order lateral modes, which causes beam steering and kink. The maximum power without beam steering and kink has been achieved over 250 mW for channel ion-implanted RW lasers with 1.8-3.7-μm ridge width, compared to 120-mW maximum power without the channel ion implantation.

Keywords

III-V semiconductors; MOCVD; beam steering; gallium arsenide; gallium compounds; indium compounds; ion implantation; laser beams; optical fabrication; ridge waveguides; semiconductor lasers; vapour phase epitaxial growth; waveguide lasers; 0.98 mum; 1.8 to 3.7 mum; 120 mW; 250 mW; GaInAs-GaInP; GaInAs-GaInP high-power lasers; beam steering characteristics; beam steering free operation; channel ion implantation; channel ion-implanted ridge waveguide lasers; high-power ridge waveguide lasers; higher order lateral modes; ion-implanted regions; kink characteristics; kink free operation; maximum power; ridge width; Beam steering; Fiber lasers; Ion implantation; Laser excitation; Laser modes; Optical waveguides; Power lasers; Pump lasers; Semiconductor lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.823496

Filename

823496