Low-Voltage Multilevel Memory Based on Organic Thin-Film Transistor

Author

Liwei Shang ; Zhuoyu Ji ; Hong Wang ; Yinping Chen ; Xing Liu ; Maixin Han ; Ming Liu

Author_Institution

Key Lab. of Nanofabrication & Novel Devices Integration Technol., Chinese Acad. of Sci., Beijing, China

Volume

32

Issue

10

fYear

2011

Firstpage

1451

Lastpage

1453

Abstract

A low-voltage multilevel organic thin-film memory device is proposed and demonstrated for nonvolatile data storage. Charge carrier density in the storage field was tuned up to four discrete levels in pentacene organic thin-film transistor with poly(methyl methacrylate)-modified Al₂O₃ film as the dielectric layer through light-assisted program procedures. Charges can be stored over 1 × 10⁴ s at room temperature. The states can be clearly distinguished after 1 × 10⁴ write-read cycles.

Keywords

dielectric materials; low-power electronics; organic semiconductors; random-access storage; thin film transistors; charge carrier density; dielectric layer; low-voltage multilevel organic thin-film memory device; nonvolatile data storage; pentacene organic thin-film transistor; poly(methyl methacrylate); storage field; Logic gates; Organic thin film transistors; Stress; Temperature measurement; Threshold voltage; Aluminum oxide; low voltage; multibit memory; organic thin-film transistor (OTFT); threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2162218

Filename

5989841