Internal voltage generator for low voltage, quarter-micrometer flash memories

Author

Kawahara, Takayuki ; Saeki, Syun-ichi ; Jyouno, Yusuke ; Miyamoto, Naoki ; Kobayashi, Takashi ; Kimura, Katsutaka

Author_Institution

Electron. Lab., Swiss Fed. Inst. of Technol., Lausanne, Switzerland

Volume

33

Issue

1

fYear

1998

fDate

1/1/1998 12:00:00 AM

Firstpage

126

Lastpage

132

Abstract

A fabricated bandgap generator using 0.25-μm Flash memory process generated a stable reference voltage under 4 V, boosted from an external power supply of 2.5 V. The generated voltage was 1.297±0.025 V at a power supply of 4 V±10%; the temperature dependence was +0.7 mV/°C. The characteristics of a triple-well bipolar transistor for the Flash memory process are sufficient for a reference voltage generator; f_T is 230 MHz, and H_FE is 70. Dynamic operation reduced the average current consumption from 306 to 8.6 μA. Fabricated voltage-doubler circuits generated a voltage 1.8 times larger than that from conventional charge-pump circuits

Keywords

EPROM; energy gap; integrated memory circuits; power bipolar transistors; reference circuits; signal generators; voltage multipliers; 0.25 micron; 230 MHz; 4 V; 8.6 muA; bandgap generator; charge-pump circuit; dynamic operation; internal voltage generator; low voltage flash memory; reference voltage; temperature dependence; triple-well bipolar transistor; voltage-doubler circuit; Bipolar transistors; Character generation; Circuits; Flash memory; Iron; Low voltage; Photonic band gap; Power generation; Power supplies; Temperature dependence;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.654944

Filename

654944